IRF7241PBF

B00HKSDBN8

MOSFET 1 P-CH -40V HEXFET 41mOhms 53nC

MOSFET 1 P-CH -40V HEXFET 41mOhms 53nCzoom

Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.6.2A (Ta)
Drain to Source Voltage.40 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .80 nC @ 10 V
Input Capacitance (Ciss.3220 pF @ 25 V
MfrInternational Rectifier
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / Case8-SOIC (0.154", 3.90mm .
Power Dissipation (Max)2.5W (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs41mOhm @ 6.2A, 10V
SeriesHEXFET?
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Digi-Key1261373012.191526International Rectifier12.19 @ 1
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev


As an Amazon Associate I earn from qualifying purchases.

1759736553.8274