Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.18A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .60 nC @ 10 V
MfrMicrosemi Corporation
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-254-3, TO-254AA (Str.
Power Dissipation (Max)4W (Ta), 125W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs220mOhm @ 18A, 10V
SeriesMilitary, MIL-PRF-19500.
Supplier Device PackageTO-254AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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