Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.7.4A (Tc)
DescriptionPOWER FIELD-EFFECT TRAN.
Detailed DescriptionN-Channel 250 V 7.4A (T.
Digi-Key Part Number2156-FQD9N25TM-ND
Drain to Source Voltage.250 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .20 nC @ 10 V
Input Capacitance (Ciss.700 pF @ 25 V
ManufacturerFairchild Semiconductor
Manufacturer Product Nu.FQD9N25TM
MfrFairchild Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)2.5W (Ta), 55W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs420mOhm @ 3.7A, 10V
SeriesQFET?
Supplier Device PackageTO-252, (D-Pak)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A
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