mpn
TPWR7904PB,L1XHQ
brand
name: Toshiba Semiconductor and Storage
manufacturer
name: Toshiba Semiconductor and Storage
Attributes
Key
Value
Base Product Number
ULN2804
Category
Discrete Semiconductor .
Current - Continuous Dr.
150A (Ta)
Drain to Source Voltage.
40V
Drive Voltage (Max Rds .
6V, 10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
85nC @ 10V
Input Capacitance (Ciss.
6650pF @ 10V
Mfr
Toshiba Semiconductor a.
Mounting Type
Surface Mount
Operating Temperature
175?C
Package
Tape & Reel (TR)
Package / Case
8-PowerVDFN
Part Status
Active
Power Dissipation (Max)
960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs
0.79mOhm @ 75A, 10V
Series
U-MOSIX-H
Supplier Device Package
8-DSOP Advance
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
3V @ 1mA