Attributes

Key Value
Base Product NumberULN2804
CategoryDiscrete Semiconductor .
Current - Continuous Dr.150A (Ta)
Drain to Source Voltage.40V
Drive Voltage (Max Rds .6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .85nC @ 10V
Input Capacitance (Ciss.6650pF @ 10V
MfrToshiba Semiconductor a.
Mounting TypeSurface Mount
Operating Temperature175?C
PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Part StatusActive
Power Dissipation (Max)960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs0.79mOhm @ 75A, 10V
SeriesU-MOSIX-H
Supplier Device Package8-DSOP Advance
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 1mA
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