IRLU110PBF

MOSFET N-Chan 100V 4.3 Amp (1 piece)

MOSFET N-Chan 100V 4.3 Amp (1 piece)zoom

Attributes

Key Value
Base Product NumberIRLU110
CaseIPAK,
CategoryDiscrete Semiconductor .
Circuit TypeN-Channel
Current - Continuous Dr.4.3A (Tc)
Drain current4.3A
Drain Current Id(rms)4.3 A
Drain Source Voltage Vds100 VDC
Drain to Source Voltage.100 V
Drain-source voltage100V
Drive Voltage (Max Rds .4V, 5V
Fall Time tf17 ns
Family SeriesVishay Transistors, IPA.
Features of semiconduct.logic level
FET Feature-
FET TypeN-Channel
Gate charge6.1nC
Gate Charge (Qg) (Max) .6.1 nC @ 5 V
Gate Leakage Current0.1 ?A
Gate Source Voltage Vgss10 VDC
Gate-source voltage?10V
Gross Weight0 lbs
Input Capacitance (Ciss.250 pF @ 25 V
Item NumberIRLU110PBF
Kind of channelenhanced
Kind of packagetube
ManufacturerVISHAY
Manufacturer Part NumberIRLU110PBF
MfrVishay Siliconix
MountingTHT
Mounting TypeThrough Hole
Net Weight0 lbs
On-state resistance540m?
Operating Temperature-55?C ~ 150?C (TJ)
Packagetube, TO-251
Package / CaseTO-251-3 Short Leads, I.
Polarisationunipolar
Power dissipation25W
Power Dissipation (Max)2.5W (Ta), 25W (Tc)
Product SeriesIPAK
Product StatusActive
Pulsed drain current17A
Rds On (Max) @ Id, Vgs540mOhm @ 2.6A, 5V
rDS(on)540 mOhm
Rise Time tr47 ns
RoHSYes
Series-
Supplier Device PackageTO-251AA
TechnologyMOSFET (Metal Oxide)
Trr100 ns
Turn Off Delay Time16 ns
Turn On Delay Time9.3 ns
Typ. Vgs(th)1.5 VDC
Type of transistorN-MOSFET
Vgs (Max)?10V
Vgs(th) (Max) @ Id2V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
thumbzoomGalcoIRLU110PBF-VISH0.583000172Vishay0.58 @ 3000
thumbzoomNewark63J76720.6073000164VISHAY0.607 @ 3000
thumbzoomRadwellIRLU110PBF0.923000172VISHAY0.92 @ 3000
thumbzoomTMEIRLU110PBF1.2111655VISHAY1.21 @ 1
Future Electronics24231841.4163000172Vishay1.416 @ 3000
Digi-Key8123931.82417197Vishay Siliconix1.824 @ 1
RS Delivers708-48841.90921172Vishay1.9092 @ 1
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