Attributes

Key Value
Base Product NumberDMT6017
CategoryDiscrete Semiconductor .
Current - Continuous Dr.36A (Tc)
Drain to Source Voltage.65 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .15.3 nC @ 10 V
Input Capacitance (Ciss.891 pF @ 30 V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Power Dissipation (Max)2.12W (Ta), 39.06W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs20mOhm @ 6A, 10V
Series-
Supplier Device PackagePowerDI3333-8 (Type UX)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id2.3V @ 250?A
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