Attributes

Key Value
Base Product NumberIPD60R360
CategoryDiscrete Semiconductor .
Current - Continuous Dr.9A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .13 nC @ 10 V
Input Capacitance (Ciss.555 pF @ 400 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusActive
Power Dissipation (Max)41W (Tc)
Rds On (Max) @ Id, Vgs360mOhm @ 2.7A, 10V
SeriesCoolMOS? P7
Supplier Device PackagePG-TO252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 140?A
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