Attributes

Key Value
Base Product NumberIPP100N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.100A (Tc)
DescriptionMOSFET N-CH 55V 100A TO.
Detailed DescriptionN-Channel 55 V 100A (Tc.
Digi-Key Part NumberIPP100N06S3-04IN-ND
Drain to Source Voltage.55 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .314 nC @ 10 V
Input Capacitance (Ciss.14230 pF @ 25 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IPP100N06S3-04
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)214W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs4.4mOhm @ 80A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 150?A
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