Attributes

Key Value
Base Product NumberDN2535
CategoryDiscrete Semiconductor .
Current - Continuous Dr.120mA (Tj)
Drain to Source Voltage.350 V
Drive Voltage (Max Rds .0V
FET FeatureDepletion Mode
FET TypeN-Channel
Input Capacitance (Ciss.300 pF @ 25 V
MfrMicrochip Technology
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 (TO-2.
Part StatusActive
Power Dissipation (Max)1W (Tc)
Rds On (Max) @ Id, Vgs25Ohm @ 120mA, 0V
Series-
Supplier Device PackageTO-92 (TO-226)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id-
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