Attributes

Key Value
Base Product NumberIPD50R380
CategoryDiscrete Semiconductor .
Current - Continuous Dr.14.1A (Tc)
Drain to Source Voltage.500 V
Drive Voltage (Max Rds .13V
FET FeatureSuper Junction
FET TypeN-Channel
Gate Charge (Qg) (Max) .24.8 nC @ 10 V
Input Capacitance (Ciss.584 pF @ 100 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusActive
Power Dissipation (Max)98W (Tc)
Rds On (Max) @ Id, Vgs380mOhm @ 3.2A, 13V
SeriesCoolMOS?
Supplier Device PackagePG-TO252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 260?A
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