Attributes

Key Value
Base Product NumberSTP8N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8A (Tc)
Drain to Source Voltage.250V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .51.8nC @ 10V
Input Capacitance (Ciss.770pF @ 25V
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Part StatusObsolete
Power Dissipation (Max)30W (Tc)
Rds On (Max) @ Id, Vgs450mOhm @ 4A, 10V
SeriesMESH OVERLAY?
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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