Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.12.6A (Tc)
Drain to Source Voltage.200V
Drive Voltage (Max Rds .5V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .120nC @ 5V
Input Capacitance (Ciss.3.25pF @ 25V
MfrFairchild Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-3P-3 Full Pack
Part StatusObsolete
Power Dissipation (Max)90W (Tc)
Rds On (Max) @ Id, Vgs230mOhm @ 6.3A, 5V
Series-
Supplier Device PackageTO-3PF
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2V @ 250?A
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