Infineon BSC320N20NS3GATMA1

B06XFRW398

INFINEON BSC320N20NS3GATMA1 Single N-Channel 200 V 32 mOhm 22 nC OptiMOS Power Mosfet - TDSON-8 - 5000 item(s)

INFINEON BSC320N20NS3GATMA1 Single N-Channel 200 V 32 mOhm 22 nC OptiMOS Power Mosfet - TDSON-8 - 5000 item(s)zoom

Attributes

Key Value
Base Product NumberBSC320
CategoryDiscrete Semiconductor .
Current - Continuous Dr.36A (Tc)
DescriptionMOSFET N-CH 200V 36A TD.
Detailed DescriptionN-Channel 200 V 36A (Tc.
Digi-Key Part NumberBSC320N20NS3GATMA1TR-ND.
Drain to Source Voltage.200 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .29 nC @ 10 V
Input Capacitance (Ciss.2350 pF @ 100 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.BSC320N20NS3GATMA1
Manufacturer Standard L.48 Weeks
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Power Dissipation (Max)125W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs32mOhm @ 36A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TDSON-8-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 90?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Future Electronics81089683.06500039Infineon3.06 @ 5000
Mouser726-BSC320N20NS3GATM3.24130Infineon3.24 @ 1
thumbzoomDigi-Key23378513.35129Infineon Technologies3.35 @ 1
thumbzoomNewark79X13373.3612042INFINEON3.36 @ 1
RS Delivers754-5311P4.74129Infineon4.74 @ 1
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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