IRF3710LPBF, Trans MOSFET N-CH Si 100V 57A 3-Pin(3+Tab) TO-262 Tube (25 Items)

mpnIRF3710LPBF
brandname: Infineon Technologies
manufacturername: Infineon Technologies

IRF3710LPBF, Trans MOSFET N-CH Si 100V 57A 3-Pin(3+Tab) TO-262 Tube (25 Items)

Model: IRF3710LPBF
PackageQuantity: 25
Manufacturer: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Channel Type	N
Configuration	Dual Drain
Current - Continuous Dr.	57A (Tc)
Dimensions	10.67 x 4.83 x 9.65 mm
Drain Current	57 A
Drain to Source On Resi.	23 mOhms
Drain to Source Voltage	100 V
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Forward Transconductance	32 S
Forward Voltage, Diode	1.2 V
Gate Charge (Qg) (Max) .	130 nC @ 10 V
Gate to Source Voltage	?20 V
Height	0.38" (9.65mm)
Input Capacitance	3130 pF @ 25V
Input Capacitance (Ciss.	3130 pF @ 25 V
Length	0.42 in
Maximum Operating Tempe.	+175 ?C
Mfr	Infineon Technologies
Minimum Operating Tempe.	-55 ?C
Mounting Type	Through Hole
Number of Elements per .	1
Number of Pins	3
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-262-3 Long Leads, I?.
Package Type	TO-262
Power Dissipation	200 W
Power Dissipation (Max)	200W (Tc)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	23mOhm @ 28A, 10V
Series	HEXFET?, HEXFET Series
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Temperature Operating R.	-55 to +175 ?C
Turn Off Delay Time	45 ns
Turn On Delay Time	12 ns
Typical Gate Charge @ V.	Maximum of 130 nC @ 10 V
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 250?A
Width	0 in

All Prices

Img	Seller	Supplier SKU	Min Price	MOQ	In Stock	Lead Time	Brand	Weight	Preferred Tier
	Future Electronics	7530009	1.488	1000	25		Infineon		1.488 @ 1000
	us.rs-online.com	70018207	1.57	5	25		Infineon		1.57 @ 25

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