Attributes

Key Value
Base Product NumberVQ2001
CategoryDiscrete Semiconductor .
Configuration4 P-Channel
Current - Continuous Dr.600mA
DescriptionMOSFET 4P-CH 30V 0.6A 1.
Detailed DescriptionMosfet Array 30V 600mA .
Digi-Key Part NumberVQ2001P-2-ND
Drain to Source Voltage.30V
FET Feature-
Gate Charge (Qg) (Max) .-
Input Capacitance (Ciss.150pF @ 15V
ManufacturerVishay Siliconix
Manufacturer Product Nu.VQ2001P-2
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / Case14-DIP
Power - Max2W
Product StatusObsolete
Rds On (Max) @ Id, Vgs2Ohm @ 1A, 12V
Series-
Supplier Device Package14-DIP
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 1mA
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