Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.13.6A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .25 nC @ 10 V
Input Capacitance (Ciss.780 pF @ 25 V
MfrFairchild Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)38W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs100mOhm @ 6.8A, 10V
SeriesQFET?
Supplier Device PackageTO-220F-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?25V
Vgs(th) (Max) @ Id4V @ 250?A
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