Attributes

Key Value
Categories Discrete Semiconductor.
Current - Continuous Dr. 13.6A (Tc)
Drain to Source Voltage. 100V
Drive Voltage (Max Rds . 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) . 25nC @ 10V
Input Capacitance (Ciss. 780pF @ 25V
Lead Free Status / RoHS. Lead free / RoHS Compl.
Manufacturer ON Semiconductor
Manufacturer Part Number FQPF19N10
Moisture Sensitivity Le. 1 (Unlimited)
Mounting Type Through Hole
Operating Temperature -55?C ~ 175?C (TJ)
Package / Case TO-220-3 Full Pack
Packaging Tube
Power Dissipation (Max) 38W (Tc)
Rds On (Max) @ Id, Vgs 100 mOhm @ 6.8A, 10V
Series QFET?
Standard Package 1,000
Supplier Device Package TO-220F
Technology MOSFET (Metal Oxide)
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