B005TAJKR0

ON SEMICONDUCTOR NTB6412ANG MOSFET Transistor

ON SEMICONDUCTOR NTB6412ANG MOSFET Transistorzoom

Attributes

Key Value
Base Product NumberNTB64
CategoryDiscrete Semiconductor .
Current - Continuous Dr.58A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .100 nC @ 10 V
Input Capacitance (Ciss.3500 pF @ 25 V
Mfronsemi
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusObsolete
Power Dissipation (Max)167W (Tc)
Rds On (Max) @ Id, Vgs18.2mOhm @ 58A, 10V
Series-
Supplier Device PackageD?PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Digi-Key22715511.4142986425322173onsemi1.41429864253 @ 221
Newark74AK07392.0325049ONSEMI2.03 @ 250
© 2025 · Data Alchemy · Version 60 · ts:1760052239
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