Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.4.5A (Ta)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .14 nC @ 5 V
Input Capacitance (Ciss.1350 pF @ 10 V
MfrRohm Semiconductor
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Part StatusActive
Power Dissipation (Max)950mW (Ta)
Rds On (Max) @ Id, Vgs35mOhm @ 4.5A, 10V
Series-
Supplier Device PackageTSMT6 (SC-95)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 1mA
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