Toshiba Semiconductor and Storage SSM3J35MFV,L3F

mpnSSM3J35MFV,L3F
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	SSM3J35
Category	Discrete Semiconductor .
Current - Continuous Dr.	100mA (Ta)
Drain to Source Voltage.	20 V
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss.	12.2 pF @ 3 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	SOT-723
Power Dissipation (Max)	150mW (Ta)
Product Status	Active
Rds On (Max) @ Id, Vgs	8Ohm @ 50mA, 4V
Series	-
Supplier Device Package	VESM
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	-

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