mpn
SI2333DDS-T1-BE3
brand
name: Vishay Siliconix
manufacturer
name: Vishay Siliconix
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
5A (Ta), 6A (Tc)
Drain to Source Voltage.
12 V
Drive Voltage (Max Rds .
1.5V, 4.5V
FET Feature
-
FET Type
P-Channel
Gate Charge (Qg) (Max) .
35 nC @ 8 V
Input Capacitance (Ciss.
1275 pF @ 6 V
Mfr
Vishay Siliconix
Mounting Type
Surface Mount
Operating Temperature
-55?C ~ 150?C (TJ)
Package
Tape & Reel (TR)
Package / Case
TO-236-3, SC-59, SOT-23.
Part Status
Active
Power Dissipation (Max)
1.2W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs
28mOhm @ 5A, 4.5V
Series
-
Supplier Device Package
SOT-23-3 (TO-236)
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?8V
Vgs(th) (Max) @ Id
1V @ 250?A