Attributes

Key Value
Categories Discrete Semiconductor.
Current - Continuous Dr. 80A (Tc)
Drain to Source Voltage. 60V
Drive Voltage (Max Rds . 10V
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) . 173nC @ 10V
Input Capacitance (Ciss. 5033pF @ 25V
Lead Free Status / RoHS. Lead free / RoHS Compl.
Manufacturer Infineon Technologies
Manufacturer Part Number SPP80P06PHXKSA1
Moisture Sensitivity Le. 1 (Unlimited)
Mounting Type Through Hole
Operating Temperature -55?C ~ 175?C (TJ)
Package / Case TO-220-3
Packaging Tube
Power Dissipation (Max) 340W (Tc)
Rds On (Max) @ Id, Vgs 23 mOhm @ 64A, 10V
Series SIPMOS?
Standard Package 500
Supplier Device Package PG-TO220-3-1
Technology MOSFET (Metal Oxide)
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