Toshiba Semiconductor and Storage TPCA8120,LQ(CM

mpnTPCA8120,LQ(CM
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	TPCA8120
Category	Discrete Semiconductor .
Current - Continuous Dr.	45A (Ta)
Drain to Source Voltage.	30 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) .	190 nC @ 10 V
Input Capacitance (Ciss.	7420 pF @ 10 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerVDFN
Part Status	Obsolete
Power Dissipation (Max)	1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs	3mOhm @ 22.5A, 10V
Series	U-MOSVI
Supplier Device Package	8-SOP Advance (5x5)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	+20V, -25V
Vgs(th) (Max) @ Id	2V @ 1mA

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