Vishay SISS70DN-T1-GE3

B08DCD8LTF

SISS70DN-T1-GE3, Trans MOSFET N-CH 125V 8.5A 8-Pin PowerPAK 1212 EP T/R (25 Items)

SISS70DN-T1-GE3, Trans MOSFET N-CH 125V 8.5A 8-Pin PowerPAK 1212 EP T/R (25 Items)zoom

Attributes

Key Value
Base Product NumberSISS70
CategoryDiscrete Semiconductor .
Current - Continuous Dr.8.5A (Ta), 31A (Tc)
Drain to Source Voltage.125 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .15.3 nC @ 10 V
Input Capacitance (Ciss.535 pF @ 62.5 V
ManufacturerVISHAY
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? 1212-8S
Power Dissipation (Max)5.1W (Ta), 65.8W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs29.8mOhm @ 8.5A, 10V
SeriesTrenchFET?
Supplier Device PackagePowerPAK? 1212-8S
TechnologyMOSFET (Metal Oxide)
Type of transistorN-MOSFET
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Newark81AC35070.533600025VISHAY0.533 @ 6000
Future ElectronicsC1457206190.72600025Vishay0.72 @ 6000
TMESISS70DN-T1-GE31.15125VISHAY1.15 @ 25
Digi-Key95219691.4605125Vishay Siliconix1.4605 @ 25
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