Vishay Siliconix SIRA00DP-T1-RE3

mpnSIRA00DP-T1-RE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Base Product Number	SIRA00
Category	Discrete Semiconductor .
Current - Continuous Dr.	100A (Tc)
Drain to Source Voltage.	30 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	220 nC @ 10 V
Input Capacitance (Ciss.	11700 pF @ 15 V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	PowerPAK? SO-8
Power Dissipation (Max)	104W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	1mOhm @ 20A, 10V
Series	TrenchFET?
Supplier Device Package	PowerPAK? SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	+20V, -16V
Vgs(th) (Max) @ Id	2.2V @ 250?A

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