SILICONIX (VISHAY) SI3447CDV-T1-GE3

B07BZQJ78Q

SILICONIX (VISHAY) SI3447CDV-T1-GE3 Si3447CDV Series P-Channel 12 V 36 mOhm Surface Mount Power Mosfet - TSOP-6-25 item(s)

SILICONIX (VISHAY) SI3447CDV-T1-GE3 Si3447CDV Series P-Channel 12 V 36 mOhm Surface Mount Power Mosfet - TSOP-6-25 item(s)zoom

Attributes

Key Value
Alternate Part No.781-SI3447CDV-GE3
Base Product NumberSI3447
BrandVishay / Siliconix
CategoryDiscrete Semiconductor .
Channel ModeEnhancement
Ciss - Input Capacitance910 pF
ConfigurationSingle
Current - Continuous Dr.7.8A (Tc)
Drain to Source Voltage.12 V
Drive Voltage (Max Rds .1.8V, 4.5V
Fall Time20 ns
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .30 nC @ 8 V
Id - Continuous Drain C.6.3 A
Input Capacitance (Ciss.910 pF @ 6 V
ManufacturerVishay
Manufacturer Part No.SI3447CDV-T1-GE3
Maximum Operating Tempe.+ 150 C
MfrVishay Siliconix
Minimum Operating Tempe.- 55 C
Mounting StyleSMD/SMT
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Package/CaseTSOP-6
PackagingReel
Part # AliasesSI3447CDV-GE3
Pd - Power Dissipation2 W
Power Dissipation (Max)2W (Ta), 3W (Tc)
Product CategoryMOSFET
Product StatusObsolete
Qg - Gate Charge20 nC
Rds On (Max) @ Id, Vgs36mOhm @ 6.3A, 4.5V
Rds On - Drain-Source R.36 mOhms
Rise Time40 ns
SeriesTrenchFET?
Supplier Device Package6-TSOP
TechnologyMOSFET (Metal Oxide)
Transistor PolarityP-Channel
Typical Turn-Off Delay .35 ns
Vds - Drain-Source Brea.- 12 V
Vgs (Max)?8V
Vgs - Gate-Source Break.8 V
Vgs th - Gate-Source Th.- 1 V
Vgs(th) (Max) @ Id1V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18130860.3172413000Vishay/Siliconix0.31724 @ 3000
thumbzoomswatee.comSI3447CDV-T1-GE31.1813000Vishay1.18 @ 3000
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