Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.42A (Tc)
Drain to Source Voltage.100 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .48 nC @ 4.5 V
Input Capacitance (Ciss.3980 pF @ 25 V
MfrInternational Rectifier
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusActive
Power Dissipation (Max)140W (Tc)
Rds On (Max) @ Id, Vgs14mOhm @ 38A, 10V
SeriesAutomotive, AEC-Q101, H.
Supplier Device PackageD-Pak
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id2.5V @ 100?A
prev


As an Amazon Associate I earn from qualifying purchases.

1759833818.5413