Attributes

Key Value
Base Product NumberAPT11F80
CategoryDiscrete Semiconductor .
Current - Continuous Dr.12A (Tc)
Drain to Source Voltage.800 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .80 nC @ 10 V
Input Capacitance (Ciss.2471 pF @ 25 V
MfrMicrosemi Corporation
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-268-3, D?Pak (2 Lead.
Part StatusActive
Power Dissipation (Max)337W (Tc)
Rds On (Max) @ Id, Vgs900mOhm @ 6A, 10V
SeriesPOWER MOS 8?
Supplier Device PackageD3Pak
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 1mA
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