STMicroelectronics STB32NM50N

mpnSTB32NM50N
brandname: STMicroelectronics
manufacturername: STMicroelectronics

ST MICROELECTRONICS STB32NM50N N-Channel 500 V 130 mOhm SMT MDmesh II Power Mosfet - D2PAK - 2 item(s)

Brand: STMicroelectronics
PartNumber: STB32NM50N
Model: STB32NM50N
PackageQuantity: 1
Manufacturer: ST MICROELECTRONICS
Label: ST MICROELECTRONICS

Attributes

Key	Value
Alternate Part No.	511-STB32NM50N
Base Product Number	STB32
Brand	STMicroelectronics
Case	D2PAK
Category	Discrete Semiconductor .
Channel Mode	Channel Mode
Channel Type	Channel Type
Configuration	Single
Current - Continuous Dr.	22A (Tc)
Drain current	22A
Drain to Source Voltage.	500 V
Drain-source voltage	500V
Drive Voltage (Max Rds .	10V
ECCN EU	EAR99
ECCN US	D2PAK
Fall Time	23.6 ns
FET Feature	-
FET Type	N-Channel
Gate charge	62.5nC
Gate Charge (Qg) (Max) .	62.5 nC @ 10 V
Gate-source voltage	?25V
Grade	Ecopack2
Height	4.6mm
Id - Continuous Drain C.	22 A
Input Capacitance (Ciss.	1973 pF @ 50 V
Kind of channel	enhanced
Length	10.4mm
Manufacturer	STMicroelectronics
Manufacturer Part No.	STB32NM50N
Maximum Continuous Drai.	22 A
Maximum Drain Source Re.	130 m?
Maximum Drain Source Vo.	Maximum Drain Source Vo.
Maximum Gate Source Vol.	Maximum Gate Source Vol.
Maximum Gate Threshold .	4V
Maximum Operating Tempe.	+150 ?C
Maximum Power Dissipati.	190 W
Mfr	STMicroelectronics
Minimum Gate Threshold .	2V
Mounting	SMD
Mounting Style	SMD/SMT
Mounting Type	Surface Mount
Number of Elements per .	1
On-state resistance	130m?
Operating Temperature	150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-263-3, D?Pak (2 Lead.
Package Name	Industrial
Package Type	D2PAK (TO-263)
Package/Case	D2PAK-2
Packaging	Reel
Packing Type	NEC
Pd - Power Dissipation	190 W
Pin Count	Pin Count
Polarisation	unipolar
Power dissipation	190W
Power Dissipation (Max)	190W (Tc)
Product Category	MOSFET
Product Status	Active
Pulsed drain current	88A
Qg - Gate Charge	62.5 nC
Rds On (Max) @ Id, Vgs	130mOhm @ 11A, 10V
Rds On - Drain-Source R.	130 mOhms
Rise Time	9.5 ns
RoHs compliant	Tape And Reel
Series	MDmesh? II, STB32NM50N,.
Stock	Stock
Supplier Device Package	D?PAK (TO-263)
Technology	MOSFET (Metal Oxide)
Transistor Configuration	Single
Transistor Material	Transistor Material
Transistor Polarity	N-Channel
Type of transistor	N-MOSFET
Typical Gate Charge @ V.	Typical Gate Charge @ V.
Typical Turn-Off Delay .	110 ns
Vds - Drain-Source Brea.	500 V
Vgs (Max)	?25V
Vgs - Gate-Source Break.	25 V
Vgs th - Gate-Source Th.	4 V
Vgs(th) (Max) @ Id	4V @ 250?A
Width	9.35mm

All Prices

Seller	Supplier SKU	Min Price	MOQ	In Stock	Brand	Preferred Tier
RS Delivers	783-2911	1.6164	5	2	STMicroelectronics	1.6164 @ 5
Future Electronics	C013370438	2.328	1000	2	STMicroelectronics	2.328 @ 1000
TME	STB32NM50N	3.78	1	2	STMicroelectronics	3.78 @ 2
Hotenda	H1819776	3.8475	1	2000	STMicroelectronics	3.8475 @ 2
st.com	STB32NM50N	4.27	1	2	STMicroelectronics	4.27 @ 2
Newark	07AH6949	4.82	1	594	STMICROELECTRONICS	4.82 @ 2
Digi-Key	3661745	5.1175	1	2	STMicroelectronics	5.1175 @ 2
swatee.com	STB32NM50N	11.97	1	1494	STMicroelectronics	11.97 @ 2

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