mpn
IPS050N03LGBKMA1
brand
name: Infineon Technologies
manufacturer
name: Infineon Technologies
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
50A (Tc)
Drain to Source Voltage.
30 V
Drive Voltage (Max Rds .
4.5V, 10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
31 nC @ 10 V
Input Capacitance (Ciss.
3200 pF @ 15 V
Mfr
Infineon Technologies
Mounting Type
Through Hole
Operating Temperature
-55?C ~ 175?C (TJ)
Package
Tube
Package / Case
TO-251-3 Stub Leads, IP.
Power Dissipation (Max)
68W (Tc)
Product Status
Obsolete
Rds On (Max) @ Id, Vgs
5mOhm @ 30A, 10V
Series
OptiMOS?
Supplier Device Package
PG-TO251-3-11
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
2.2V @ 250?A