IXYS IXFK110N07

mpnIXFK110N07
brandname: IXYS
manufacturername: IXYS

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	110A (Tc)
Drain to Source Voltage.	70V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	480nC @ 10V
Input Capacitance (Ciss.	9000pF @ 25V
Mfr	IXYS
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-264-3, TO-264AA
Part Status	Not For New Designs
Power Dissipation (Max)	500W (Tc)
Rds On (Max) @ Id, Vgs	6mOhm @ 55A, 10V
Series	HiPerFET?
Supplier Device Package	TO-264AA (IXFK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 8mA

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