Panjit International Inc. PJQ4463AP_R2_00001

mpnPJQ4463AP_R2_00001
brandname: Panjit International Inc.
manufacturername: Panjit International Inc.

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	4.2A (Ta)
Drain to Source Voltage.	60 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) .	17 nC @ 10 V
Input Capacitance (Ciss.	879 pF @ 30 V
Mfr	Panjit International In.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	8-PowerVDFN
Part Status	Active
Power Dissipation (Max)	2.1W (Ta)
Rds On (Max) @ Id, Vgs	68mOhm @ 6A, 10V
Series	-
Supplier Device Package	DFN3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.5V @ 250?A

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