Vishay SIHP35N60E-GE3

B07ZZJGQ1F

SIHP35N60E-GE3, Trans MOSFET N-CH 600V 32A 3-Pin(3+Tab) TO-220AB (5 Items)

SIHP35N60E-GE3, Trans MOSFET N-CH 600V 32A 3-Pin(3+Tab) TO-220AB (5 Items)zoom

Attributes

Key Value
Base Product NumberSIHP35
CategoryDiscrete Semiconductor .
Current - Continuous Dr.32A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .132 nC @ 10 V
Input Capacitance (Ciss.2760 pF @ 100 V
ManufacturerVISHAY
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Part StatusActive
Power Dissipation (Max)250W (Tc)
Rds On (Max) @ Id, Vgs94mOhm @ 17A, 10V
SeriesE
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Type of transistorN-MOSFET
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Digi-Key67089634.12896100025Vishay Siliconix4.12896 @ 1000
TMESIHP35N60E-GE36.74125VISHAY6.74 @ 25
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