Vishay Siliconix SIHP35N60E-GE3

mpnSIHP35N60E-GE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Base Product Number	SIHP35
Category	Discrete Semiconductor .
Current - Continuous Dr.	32A (Tc)
Drain to Source Voltage.	600 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	132 nC @ 10 V
Input Capacitance (Ciss.	2760 pF @ 100 V
Mfr	Vishay Siliconix
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-220-3
Part Status	Active
Power Dissipation (Max)	250W (Tc)
Rds On (Max) @ Id, Vgs	94mOhm @ 17A, 10V
Series	E
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	4V @ 250?A

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