Infineon IPD068N10N3GATMA1

mpnIPD068N10N3GATMA1
brandname: INFINEON
manufacturername: INFINEON

INFINEON IPD068N10N3GATMA1 Single N-Channel 100 V 6.8 mOhm 51 nC OptiMOS Power Mosfet - TO-252-3 - 2500 item(s)

INFINEON IPD068N10N3GATMA1 Single N-Channel 100 V 6.8 mOhm 51 nC OptiMOS Power Mosfet - TO-252-3 - 2500 item(s)

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Brand: Infineon
PartNumber: IPD068N10N3GATMA1
Model: IPD068N10N3GATMA1
PackageQuantity: 1
Binding: Tools & Home Improvement
Manufacturer: INFINEON
Label: INFINEON

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	90A (Tc)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	6V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	68 nC @ 10 V
Input Capacitance (Ciss.	4910 pF @ 50 V
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package / Case	TO-252-3, DPak (2 Leads.
Part Status	Active
Power Dissipation (Max)	150W (Tc)
Rds On (Max) @ Id, Vgs	6.8mOhm @ 90A, 10V
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.5V @ 90?A

All Prices

Img	Seller	Supplier SKU	Min Price	MOQ	In Stock	Lead Time	Brand	Weight	Preferred Tier
	Future Electronics	9060192	1.7802	2500	25		Infineon		1.7802 @ 2500
	RS Delivers	170-2284	2.0004	1	17500		Infineon		2.0004 @ 25
	Newark	50Y2022	2.45	5	2441		INFINEON		2.45 @ 25
	Digi-Key	6134227	2.457	1	25	369	Infineon Technologies		2.457 @ 25

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