IXYS IXFH60N65X2

B07BZVQPTS

IXYS IXFH60N65X2 650V 60A 0.052? N-ch TO-247 - 30 item(s)

IXYS IXFH60N65X2 650V 60A 0.052? N-ch TO-247 - 30 item(s)zoom

Attributes

Key Value
Base Product NumberIXFH60
CaseTO247-3
CategoryDiscrete Semiconductor .
Current - Continuous Dr.60A (Tc), 10V
DescriptionMOSFET N-CH 650V 60A TO.
Detailed DescriptionN-Channel 650 V 60A (Tc.
Digi-Key Part NumberIXFH60N65X2-ND
Drain current60A
Drain to Source Voltage.107 nC @ 10 V, 650 V
Drain-source voltage650V
Drive Voltage (Max Rds .52mOhm @ 30A, 10V
Drive Voltage (Max Rds .10V
Features of semiconduct.ultra junction x-class
FET Feature-, 780W (Tc)
FET TypeMOSFET (Metal Oxide), N.
Gate charge108nC
Gate Charge (Qg) (Max) .6180 pF @ 25 V, 107 nC .
Gate-source voltage?30V
Input Capacitance (Ciss.6180 pF @ 25 V
Kind of channelenhanced
Kind of packageTube
ManufacturerIXYS
Manufacturer Product Nu.IXFH60N65X2
Manufacturer Standard L.53 Weeks
MfrIXYS
MountingTHT
Mounting TypeThrough Hole, TO-247-3
On-state resistance52m?
Operating TemperatureThrough Hole, -55?C ~ 1.
PackageActive, Tube
Package / CaseTO-247-3, 650 V
Part StatusN-Channel
Polarisationunipolar
Power dissipation780W
Power Dissipation (Max)-55?C ~ 150?C (TJ), 780.
Product StatusActive
Pulsed drain current120A
Rds On (Max) @ Id, Vgs52mOhm @ 30A, 10V, 5.5V.
Reverse recovery time180ns
SeriesTube, HiPerFET?, Ultra .
Supplier Device PackageTO-247 (IXTH)
TechnologyHiPerFET?,, 60A (Tc), M.
Type of transistorN-MOSFET
Vgs (Max)?30V, -
Vgs(th) (Max) @ Id5.5V @ 4mA, ?30V

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
thumbzoomTMEIXFH60N65X28.18130IXYS8.18 @ 30
RS Delivers146-43729.36130IXYS9.36 @ 30
Future Electronics30967529.8049030IXYS9.804 @ 90
thumbzoomDigi-Key562949412.6468130IXYS12.6468 @ 30
prev


As an Amazon Associate I earn from qualifying purchases.

1759854560.2870