mpn
BUK7E11-55B,127
brand
name: NXP USA Inc.
manufacturer
name: NXP USA Inc.
Attributes
Key
Value
Base Product Number
BUK7
Category
Discrete Semiconductor .
Current - Continuous Dr.
75A (Tc)
Drain to Source Voltage.
55 V
Drive Voltage (Max Rds .
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
37 nC @ 10 V
Input Capacitance (Ciss.
2604 pF @ 25 V
Mfr
NXP USA Inc.
Mounting Type
Through Hole
Operating Temperature
-55?C ~ 175?C (TJ)
Package
Tube
Package / Case
TO-262-3 Long Leads, I?.
Power Dissipation (Max)
157W (Tc)
Product Status
Obsolete
Rds On (Max) @ Id, Vgs
11mOhm @ 25A, 10V
Series
TrenchMOS?
Supplier Device Package
I2PAK
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
4V @ 1mA