Attributes

Key Value
Base Product NumberFQD2
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.6A (Tc)
Drain to Source Voltage.1000V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .15.5nC @ 10V
Input Capacitance (Ciss.520pF @ 25V
MfrON Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusActive
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs9Ohm @ 800mA, 10V
SeriesQFET?
Supplier Device PackageD-Pak
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A
prev


As an Amazon Associate I earn from qualifying purchases.

1759852006.9039