Attributes

Key Value
Base Product NumberDMP2010
CategoryDiscrete Semiconductor .
Current - Continuous Dr.12.7A (Ta), 42A (Tc)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .103 nC @ 10 V
Input Capacitance (Ciss.3350 pF @ 10 V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Part StatusActive
Power Dissipation (Max)900mW (Ta)
Rds On (Max) @ Id, Vgs9.5mOhm @ 3.6A, 4.5V
Series-
Supplier Device PackagePowerDI3333-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?10V
Vgs(th) (Max) @ Id1.2V @ 250?A
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