Infineon Technologies IPS60R1K0CEAKMA1

mpnIPS60R1K0CEAKMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	IPS60R1
Category	Discrete Semiconductor .
Current - Continuous Dr.	6.8A (Tj)
Drain to Source Voltage.	600 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	13 nC @ 10 V
Input Capacitance (Ciss.	280 pF @ 100 V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-40?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-251-3 Short Leads, I.
Power Dissipation (Max)	61W (Tc)
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	1Ohm @ 1.5A, 10V
Series	CoolMOS? CE
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.5V @ 130?A

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