Attributes

Key Value
Base Product NumberNVHL040
CategoryDiscrete Semiconductor .
Current - Continuous Dr.60A (Tc)
Drain to Source Voltage.1200 V
Drive Voltage (Max Rds .20V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .106 nC @ 20 V
Input Capacitance (Ciss.1781 pF @ 800 V
Mfronsemi
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-247-3
Part StatusActive
Power Dissipation (Max)348W (Tc)
Rds On (Max) @ Id, Vgs56mOhm @ 35A, 20V
SeriesAutomotive, AEC-Q101
Supplier Device PackageTO-247-3
TechnologySiCFET (Silicon Carbide)
Vgs (Max)+25V, -15V
Vgs(th) (Max) @ Id4.3V @ 10mA
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