Rectron USA RM21N650TI

mpnRM21N650TI
brandname: Rectron USA
manufacturername: Rectron USA

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	21A
Drain to Source Voltage.	650V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	48nC @ 50V
Input Capacitance (Ciss.	2600pF @ 50V
Mfr	Rectron USA
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-220-3 Full Pack
Part Status	Active
Power Dissipation (Max)	33.8W (Tc)
Rds On (Max) @ Id, Vgs	180mOhm @ 10.5A, 10V
Series	-
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	4V @ 250?A

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