Attributes

Key Value
Base Product NumberIRFIB5
CategoryDiscrete Semiconductor .
Current - Continuous Dr.5.1A (Tc)
DescriptionMOSFET N-CH 650V 5.1A T.
Detailed DescriptionN-Channel 650 V 5.1A (T.
Digi-Key Part NumberIRFIB5N65A-ND
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .48 nC @ 10 V
Input Capacitance (Ciss.1417 pF @ 25 V
ManufacturerVishay Siliconix
Manufacturer Product Nu.IRFIB5N65A
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack, Iso.
Power Dissipation (Max)60W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs930mOhm @ 3.1A, 10V
Series-
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A
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