mpn
IPB50R250CPATMA1
brand
name: Infineon Technologies
manufacturer
name: Infineon Technologies
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
13A (Tc)
Drain to Source Voltage.
550V
Drive Voltage (Max Rds .
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
36nC @ 10V
Input Capacitance (Ciss.
1420pF @ 100V
Mfr
Infineon Technologies
Mounting Type
Surface Mount
Operating Temperature
-55?C ~ 150?C (TJ)
Package
Tape & Reel (TR)
Package / Case
TO-263-3, D?Pak (2 Lead.
Part Status
Obsolete
Power Dissipation (Max)
114W (Tc)
Rds On (Max) @ Id, Vgs
250mOhm @ 7.8A, 10V
Series
CoolMOS?
Supplier Device Package
PG-TO263-3-2
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
3.5V @ 520?A