Infineon Technologies IPB50R250CPATMA1

mpnIPB50R250CPATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	IPB50R
Category	Discrete Semiconductor .
Current - Continuous Dr.	13A (Tc)
Drain to Source Voltage.	550 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	36 nC @ 10 V
Input Capacitance (Ciss.	1420 pF @ 100 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package / Case	TO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)	114W (Tc)
Rds On (Max) @ Id, Vgs	250mOhm @ 7.8A, 10V
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.5V @ 520?A

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