Attributes

Key Value
Base Product NumberSPD08N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.7.6A (Tc)
Drain to Source Voltage.560 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .32 nC @ 10 V
Input Capacitance (Ciss.750 pF @ 25 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)83W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs600mOhm @ 4.6A, 10V
SeriesCoolMOS?
Supplier Device PackagePG-TO252-3-11
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.9V @ 350?A
prev


As an Amazon Associate I earn from qualifying purchases.

1759870218.1290