IXYS IXFC52N30P

mpnIXFC52N30P
brandname: IXYS
manufacturername: IXYS

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	24A (Tc)
Drain to Source Voltage.	300 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	110 nC @ 10 V
Input Capacitance (Ciss.	3490 pF @ 25 V
Mfr	IXYS
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	ISOPLUS220?
Part Status	Obsolete
Power Dissipation (Max)	100W (Tc)
Rds On (Max) @ Id, Vgs	75mOhm @ 26A, 10V
Series	PolarHT? HiPerFET?
Supplier Device Package	ISOPLUS220?
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	5V @ 4mA

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