Attributes

Key Value
Base Product NumberIXTF200
CategoryDiscrete Semiconductor .
Current - Continuous Dr.90A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .152 nC @ 10 V
Input Capacitance (Ciss.9400 pF @ 25 V
MfrIXYS
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / Casei4-Pac?-5
Power Dissipation (Max)156W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs7mOhm @ 50A, 10V
SeriesTrench
Supplier Device PackageISOPLUS i4-PAC?
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4.5V @ 250?A
prev


As an Amazon Associate I earn from qualifying purchases.

1759872637.6750