Attributes

Key Value
Channel TypeN
ConfigurationSingle
Dimensions10.51 x 4.65 x 15.49 mm
Drain Current3.3 A
Drain to Source On Resi.1.8 Ohms
Drain to Source Voltage400 V
Forward Transconductance1.7 S
Forward Voltage, Diode1.6 V
Gate to Source Voltage+/-20 V
Height0.61" (15.49mm)
Input Capacitance410 pF @ 25 V
Length0.413 in
Maximum Operating Tempe.+150 ?C
Minimum Operating Tempe.-55 ?C
Mounting TypeThrough Hole
Number of Elements per .1
Number of Pins3
Package TypeTO-220AB
PolarizationN-Channel
Power Dissipation50 W
Product HeaderHexfet? Power MOSFET
SeriesIRF Series
Temperature Operating R.-55 to +150 ?C
Total Gate Charge20 nC
Turn Off Delay Time30 ns
Turn On Delay Time10 ns
Typical Gate Charge @ V.Maximum of 20 nC @ 10 V
Voltage, Breakdown, Dra.400 V
Width0 in
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