Attributes

Key Value
Base Product NumberSI1067
CategoryDiscrete Semiconductor .
Current - Continuous Dr.1.06A (Ta)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .9.3 nC @ 5 V
Input Capacitance (Ciss.375 pF @ 10 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Part StatusObsolete
Power Dissipation (Max)236mW (Ta)
Rds On (Max) @ Id, Vgs150mOhm @ 1.06A, 4.5V
SeriesTrenchFET?
Supplier Device PackageSC-89 (SOT-563F)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?8V
Vgs(th) (Max) @ Id950mV @ 250?A
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